1 n-channel enhancement mode field effect transistor sy mbol pa r a me t e r units v d s dr ain - s o u r c e vo lt a g e 60 v v g s g a te-so u c e v o lt a g e 2 0 v i d @ t c = 2 5 co n t i n u o u s dr a in c u r r e n t 1 80 a i d @ t c = 1 0 0 co n t i n u o u s dr a in c u r r e n t 1 50 a i d m pulsed d r a i n c u r r e n t 2 250 a eas si n g l e pu l s e a v a l a n c h e e n e r g y 3 405 mj i a s av a l a n c h e c u r r e n t 80 a p d @ t c = 2 5 t o t a l p o w e r d i s s i p a t i o n 260 w t s t g s t o r a g e t e m p e r a t u r e r a n g e - 5 5 to 1 7 5 t j o p e r a t in g j u n c tio n t e m p e r at u re ran g e - 5 5 to 1 7 5 sy mbol pa r a me t e r value unit r ja t h e r m a l re s is t a n c e j u n c t io n - a m b i e n t 1 / w r jc / w bvdss rdson i d 60v 7.8m 80a simple drive requirement fast switching low on-resistance general de scription features appl icati ons motor control dc-dc converters absolute maxi mu m ratings thermal data to220/263/262 pin configuration produ ct su mmery cmp80n06/cmb80n06/cmi80n06 general purpose power amplifier thermal resistance junction-case the 80n06 is n-ch mosfet with extreme high cell density , which provide excellent rdson and gate charge for most of the synchronous buck converter applications. value 0.9 62 g d s to-263 g d to-220 s (cmb80n06) (cmp80n06) to-262 g s d (cmi80n06) http://
, unless other w ise n o ted) cmp80n06/cmb80n06/cmi80n06 2 n-channel enhancement mode field effect transistor sy mbol pa r a m e t e r co n d i t i o n s m i n . t y p . m a x . unit bv dss d r a i n- s o u r c e br e a k d o w n v o l t a g e v g s = 0 v , i d =250ua 60 --- --- v v g s = 10v , i d =8 0a --- 7.8 r d s ( on ) static drain- s o urce on-res istance 2 v g s =4.5v , i d =80 a - - - 14 m v g s ( t h ) ga te t h r e sh o l d vo l ta g e 2 --- 4 v v g s = v d s , i d = 2 5 0 u a v d s = 60v , v g s = 0 v --- --- 1 i d s s d r a i n - s o u r c e l e a k a g e c u r r e n t v d s = 60v , v g s = 0v , tj=125 c --- --- 100 u a i g s s ga te - so u r c e l e a k a g e c u r r e n t v g s 20v --- --- 1 0 0 n a g fs f o r w a rd t r a n sc o n d u c ta n c e v d s = 10 v , i d =40a --- 50 --- s r g v e c n a t s i s e r e t a g d s = 0 v , v g s =0v , f=1mhz --- 1.5 --- q g t o tal gate charge --- 76 --- q g s gate-source charge --- 24 --- q g d gate-drain charge --- 35 --- n c t d ( o n ) t u r n - on d e la y t i m e --- 45 --- t r r i se t i m e --- 160 --- t d ( o f f ) t u r n - off d e l a y t i m e --- 95 --- t f f a l l t i m e --- 68 --- n s c i s s input cap a cita nce --- 3800 --- c os s ou t put ca p a c it a n c e - - - 815 - - - c r s s r e v e r s e t ra n sf e r c a p ac i ta n c e v d s = 25v , v g s =0 v , f = 1 mhz --- 300 --- p f sy mbol pa r a m e t e r co n d i t i o n s m i n . t y p . m a x . unit i s c o n t i n u o u s s o u r ce c u r r e n t 1 --- --- 80 a i s m pu l s e d so u r c e c u r r e nt 2 v g = v d =0v , force current --- --- 250 a v s d d i o d e fo r w a r d v o l ta g e 2 v g s = 0 v , i s = 80 a , t j = 2 5 --- --- 1.5 v note : 1.the data teste d b y surface m ou nted on a 1 inch 2 fr-4 b oard w i th 2oz copp er. 2.the data teste d b y pulsed , pul se w i dth 300 u s , du t y c y c le 2% 3.the eas data show s ma x. ra ting . the test condi ti on is v dd = 24v , v g s =10v,l=0.13 m h,i a s = 80a electrical characteristics (t j =25 diode characteristics 6.5 8.2 i d 80a = v ds 30v = v gs 0 to 10v = v ds 30v = i d a 0 8 = g =3.3 v gs =10v r
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